REMINDER: Silicon Frontline Showcases Software to Improve Semiconductor Power Device Reliability and Efficiency at International Symposium on Power Semiconductor Devices and ICs
June 4-7, 2012, Bruges, Belgium
(firmenpresse) - BRUGES, BELGIUM -- (Marketwire) -- 06/05/12 --
, Inc. (SFT) an EDA company, in the 3D parasitic extraction and analysis software market, is exhibiting at the International Symposium on Power Semiconductor Devices and ICs () and showing products that improve semiconductor power device reliability and efficiency: (Fast 3D) for fast 3D extraction and (Resistive 3D) for 3D extraction and analysis of large resistive structures and (Pont-to-Point) for IR drop analysis.
Monday-Thursday, June 4-7, 2012. 9 am to 4:30 pm
Stand C3
Bruges, Belgium
To make an appointment with Silicon Frontline, please email .
For more information on the ISPD event, please visit .
F3D is chosen for its nanometer and A/MS design verification accuracy.
R3D is used for analysis that improves the reliability and efficiency of semiconductor power devices. R3D has been adopted by over 20 customers and applied to MOS, DMOS, LDMOS, vertical DMOS, waffle-style and GaN HEMT designs.
P2P delivers point-to-point or multipoint-to-multipoint resistance analysis and fast, static IR drop analysis.
, Inc. provides parasitic extraction and analysis software for post-layout verification that is Guaranteed Accurate and works with existing design flows from major EDA vendors. Using new 3D technology, the company's software products improve silicon quality for standard and advanced nanometer processes. For more information please visit . For sales or general assistance, please email .
Notes to editors:
Acronyms and Definitions
A/MS: Analog Mixed Signal
DMOS: Double-diffused Metal Oxide Semiconductor
EDA: Electronic Design Automation
F3D: Fast 3D
GaN: Gallium Nitride
HEMT: High Electron Mobility Transistor
IR Drop Voltage Drop Analysis
LDMOS: Laterally Diffused Metal Oxide Semiconductor
MOS: Metal Oxide Semiconductor
R3D: Resistive 3D
Rdson: Resistance from drain to source
All trademarks and tradenames are the property of their respective holders.
Press Contact:
Georgia Marszalek
ValleyPR LLC
+1 650 345 7477
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Datum: 05.06.2012 - 19:00 Uhr
Sprache: Deutsch
News-ID 1121361
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