New Vishay Siliconix 600 V and 650 V N-Channel Power MOSFETs Feature Currents From 22 A to 47 A and Ultra-Low Maximum On-Resistance Down to 64 Milliohms
Devices Feature the New E Series Super Junction Technology for Low FOM and High Power Density in Four Packages
(firmenpresse) - MALVERN, PA -- (Marketwire) -- 10/12/11 -- Vishay Intertechnology, Inc. (NYSE: VSH) today released a new series of 600 V and 650 V n-channel power MOSFETs with ultra-low maximum on-resistance from 64 to 190 milliohms at 10 V and with a wide range of current ratings from 22 A to 47 A. Based on Vishay's next generation of Super Junction Technology, the E Series MOSFETs offer ultra-low gate charge and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.
With the new E Series technology, on-resistance is reduced by 30 % compared with previous-generation S Series devices. Depending on the application, these products can deliver higher power density and achieve new levels of efficiency. Gate drive losses are also reduced due to the lower input capacitance of this new platform.
The 12 E Series devices released today include four 22 A MOSFETs and four 30 A MOSFETs with on-resistance of 190 and 125 milliohms, respectively, at 10 V. The 22 A and 30 A MOSFETs are available in the TO-220, TO-220 FullPAK, TO-247, and TO-263 (D2PAK) packages. In addition, one 47 A device with on-resistance of 64 milliohms at 10 V is offered in the TO-247, and a 24 A, 650 V MOSFET with an on-resistance of 150 milliohms is offered in the TO-220, TO-263 (D2AK), and TO-247 packages.
The ultra-low on-resistance of the E Series translates into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including power factor correction, server and telecom power systems, welding, plasma cutting, battery chargers, high-intensity discharge (HID) lighting, fluorescent ballast lighting, semiconductor capital equipment, solar inverters, and induction heating.
The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are compliant to RoHS Directive 2002/95/EC.
Samples of these new power MOSFETs are available today, with lead times of 16 to 17 weeks for production orders. Follow Vishay Siliconix at .
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at .
Link to datasheet(s):
(SiHP22N60E)
(SiHF22N60E)
(SiHG22N60E)
(SiHB22N60E)
(SiHP24N65E)
(SiHG24N65E)
(SiHB24N65E)
(SiHP30N60E)
(SiHF30N60E)
(SiHG30N60E)
(SiHB30N60E)
(SiHG47N60E)
Link to product photo:
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Datum: 12.10.2011 - 09:00 Uhr
Sprache: Deutsch
News-ID 1045148
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Electronic Design Architecture
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